Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

摘要

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8 off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magnetotransport measurements. We find a moderate p-type doping, high carrier mobility, and half integer quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480610]